Title :
Simulations of Graphene Base Transistors With Improved Graphene Interface Model
Author :
Di Lecce, Valerio ; Gnudi, Antonio ; Gnani, Elena ; Reggiani, Susanna ; Baccarani, Giorgio
Author_Institution :
E. De Castro Adv. Res. Center on Electron. Syst., Univ. of Bologna, Bologna, Italy
Abstract :
A simulation study of the graphene base heterojunction transistor (GBHT) is presented based on a novel realistic graphene-Si interface model, calibrated on the experimental graphene-Si Schottky diodes, whose current-voltage-temperature characteristics are well reproduced. The GBHT simulations predict fT in the tens-of-gigahertz range and confirm the need for an improved quality of the graphene interface for the terahertz operation to be reached.
Keywords :
Schottky diodes; elemental semiconductors; graphene devices; heterojunction bipolar transistors; semiconductor device models; silicon; GBHT; Si; graphene base heterojunction transistor; graphene interface model; graphene-Si Schottky diodes; graphene-Si interface model; Graphene; Heterojunctions; Predictive models; Schottky diodes; Silicon; Solids; Transistors; Graphene; modeling; quantum transport; simulation; transistor;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2452214
