• DocumentCode
    737481
  • Title

    Simulations of Graphene Base Transistors With Improved Graphene Interface Model

  • Author

    Di Lecce, Valerio ; Gnudi, Antonio ; Gnani, Elena ; Reggiani, Susanna ; Baccarani, Giorgio

  • Author_Institution
    E. De Castro Adv. Res. Center on Electron. Syst., Univ. of Bologna, Bologna, Italy
  • Volume
    36
  • Issue
    9
  • fYear
    2015
  • Firstpage
    969
  • Lastpage
    971
  • Abstract
    A simulation study of the graphene base heterojunction transistor (GBHT) is presented based on a novel realistic graphene-Si interface model, calibrated on the experimental graphene-Si Schottky diodes, whose current-voltage-temperature characteristics are well reproduced. The GBHT simulations predict fT in the tens-of-gigahertz range and confirm the need for an improved quality of the graphene interface for the terahertz operation to be reached.
  • Keywords
    Schottky diodes; elemental semiconductors; graphene devices; heterojunction bipolar transistors; semiconductor device models; silicon; GBHT; Si; graphene base heterojunction transistor; graphene interface model; graphene-Si Schottky diodes; graphene-Si interface model; Graphene; Heterojunctions; Predictive models; Schottky diodes; Silicon; Solids; Transistors; Graphene; modeling; quantum transport; simulation; transistor;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2015.2452214
  • Filename
    7147793
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=737481