DocumentCode :
737492
Title :
Density of Traps at the Insulator/III-N Interface of GaN Heterostructure Field-Effect Transistors Obtained by Gated Hall Measurements
Author :
Mehari, Shlomo ; Gavrilov, Arkady ; Eizenberg, Moshe ; Ritter, Dan
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
Volume :
36
Issue :
9
fYear :
2015
Firstpage :
893
Lastpage :
895
Abstract :
We apply the gated Hall method to obtain the density of trap distribution, Dit(E), at the insulator/III-N interface of a heterostructure field effect transistor. It is shown that Dit is proportional to the difference between the steady-state and the high-frequency prediction of the gate-induced two-dimensional electron gas concentrations. The Dit profile at the SiNx/GaN interface in the energy range of 1.2-2.3 eV below the GaN conduction band is obtained as a demonstration of the method.
Keywords :
Hall effect; III-V semiconductors; gallium compounds; high electron mobility transistors; silicon compounds; two-dimensional electron gas; wide band gap semiconductors; GaN heterostructure field effect transistors; SiNx-GaN; electron volt energy 1.2 eV to 2.3 eV; gate-induced two-dimensional electron gas concentrations; gated Hall measurements; high-frequency prediction; insulator-III-N interface; trap density; trap distribution; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Semiconductor device measurement; Wide band gap semiconductors; AlGaN/GaN MIS-HEMT; Hall effect; density of interface states; electron trapping; hall effect;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2015.2452211
Filename :
7147810
Link To Document :
بازگشت