DocumentCode
737595
Title
Mechanics Modeling and the Structural Relaxation Effect on ZnO Nanowires
Author
Jiang, Hao ; Wang, Chengyuan ; Luo, Ying
Author_Institution
Faculty of Civil Engineering and Mechanics, Jiangsu University, Zhenjiang, China
Volume
14
Issue
5
fYear
2015
Firstpage
862
Lastpage
870
Abstract
Molecular dynamics simulations of ZnO nanowires (NWs) [22] show that the structural relaxation (SR) leads to the distribution of Young\´s modulus (Y ) different from the assumption of the core–shell (C–S ) model. It is thus of interest to validate the C–S model in measuring the equivalent Young\´s modulus and evaluate the effect of SR on the piezoelectric potential of bent ZnO NWs. To this end, a layer-wise model with the actual Y- distribution is developed and compared with the C–S model in the virtual experiments performed via the finite-element simulations. It is found that, in the tensile test, the C–S model can still be used to predict the Young\´s modulus as it happens to reflect a quadratic polynomial law of the SR-induced excess strain energy density. In addition, the strong effect of SR is achieved for the piezoelectric potential of the bent NWs, where the redistributed piezoelectric property plays a predominant role.
Keywords
Analytical models; II-VI semiconductor materials; Load modeling; Material properties; Nanomaterials; Strain; Zinc oxide; Structural relaxation; Young´s modulus; ZnO nanowires; piezoelectric potential;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2015.2453051
Filename
7150423
Link To Document