• DocumentCode
    737595
  • Title

    Mechanics Modeling and the Structural Relaxation Effect on ZnO Nanowires

  • Author

    Jiang, Hao ; Wang, Chengyuan ; Luo, Ying

  • Author_Institution
    Faculty of Civil Engineering and Mechanics, Jiangsu University, Zhenjiang, China
  • Volume
    14
  • Issue
    5
  • fYear
    2015
  • Firstpage
    862
  • Lastpage
    870
  • Abstract
    Molecular dynamics simulations of ZnO nanowires (NWs) [22] show that the structural relaxation (SR) leads to the distribution of Young\´s modulus (Y) different from the assumption of the core–shell (C–S) model. It is thus of interest to validate the C–S model in measuring the equivalent Young\´s modulus and evaluate the effect of SR on the piezoelectric potential of bent ZnO NWs. To this end, a layer-wise model with the actual Y- distribution is developed and compared with the C–S model in the virtual experiments performed via the finite-element simulations. It is found that, in the tensile test, the C–S model can still be used to predict the Young\´s modulus as it happens to reflect a quadratic polynomial law of the SR-induced excess strain energy density. In addition, the strong effect of SR is achieved for the piezoelectric potential of the bent NWs, where the redistributed piezoelectric property plays a predominant role.
  • Keywords
    Analytical models; II-VI semiconductor materials; Load modeling; Material properties; Nanomaterials; Strain; Zinc oxide; Structural relaxation; Young´s modulus; ZnO nanowires; piezoelectric potential;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2015.2453051
  • Filename
    7150423