مرکز منطقه ای اطلاع رساني علوم و فناوري - Amorphous Indium–Gallium

DocumentCode :

737843

Title :

Amorphous Indium–Gallium–Oxide UV Photodetectors

Author :

Chang, Ting-Hao ; Chang, Shoou-Jinn ; Weng, Wen-Yin ; Chiu, Chiu-Jung ; Wei, Chi-Yu

Author_Institution :

Department of Electrical EngineeringAdvanced Optoelectronic Technology Center, Center for Micro/Nano Science and Technology, Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan

Volume :

Issue :

fYear :

2015

Firstpage :

2083

Lastpage :

2086

Abstract :

We report the fabrication of amorphous (In_xGa_1−x)₂O₃ metal–semiconductor–metal ultraviolet (UV) photodetectors on glass substrate by co-sputtering. It was found that, we could change the cutoff wavelength of the fabricated photodetectors by changing the RF sputtering power of the In₂O₃ target. With 5 V applied bias, it was found that the measured dark currents were $2\\times 10^{-12}$ , $1\\times 10^{-11}$ , and $2.3,\\times , 10^{-11}$ A for sample A prepared with 40 W In₂O₃ sputtering power, sample B prepared with 50 W In₂O₃ sputtering power, and sample C prepared with 60 W In₂O₃ sputtering power, respectively. It was also found that the UV-to-visible rejection ratios were $3\\times 10^{3}$ , $5\\times 10^{3}$ , and $1.5\\times 10^{4}$ for samples A, B, and C, respectively. Furthermore, it was found that the response speeds of the fabricated devices were good.