Title :
A Novel Hybrid Poly-Si Nanowire LDMOS With Extended Drift
Author :
Jhen-Yu Tsai ; Hsin-Hui Hu ; Yung-Chun Wu ; Yi-Rue Jhan ; Kun-Ming Chen ; Guo-Wei Huang
Author_Institution :
Dept. of Electron. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan
Abstract :
A novel hybrid multiple nanowire (NW) channels lateral diffused MOS (LDMOS) with extended drift, which combines the advantages of high breakdown voltage, low specific on-resistance, and superior electrical characteristics is presented. This hybrid NW LDMOS based on polycrystalline silicon thin-film transistor exhibits a high ON/OFF ratio , a low subthreshold slope of 192.6 mV/decade, a high breakdown voltage of 272.6 V, and low specific on-resistance of 161.8 mΩ-cm2.
Keywords :
MOSFET; electric breakdown; elemental semiconductors; nanowires; silicon; thin film transistors; Si; breakdown voltage; electrical characteristics; extended drift; hybrid multiple nanowire channels; hybrid poly-Si nanowire LDMOS; lateral diffused MOS; low specific on-resistance; polycrystalline silicon thin-film transistor; subthreshold slope; voltage 272.6 V; Electric breakdown; Impact ionization; Logic gates; Semiconductor process modeling; Silicon; Thin film transistors; High-voltage TFT (HVTFT); lateral diffused MOS (LDMOS); nanowire (NW); polycrystalline silicon thin-film transistors (poly-Si TFTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2299811
