Carrier Recombination at Metallic Precipitates in p-and n-Type Silicon

A parameterized model is proposed in order to analytically calculate the metallic precipitate-related carrier recombination/lifetime that depends on excess carrier and doping concentration, as well as precipitate size and density in both p- and n-type silicon. The parameterization is based on numerical simulations of recombination at the precipitate-silicon interface, assuming that the dominant physical mechanism is thermionic emission currents due to internal Schottky contacts between metal (silicide) and semiconductor. Application examples and the range of validity of the proposed analytical calculation are discussed.