Title :
Carrier Recombination at Metallic Precipitates in p-and n-Type Silicon
Author :
Kwapil, Wolfram ; Schon, Jonas ; Warta, Wilhelm ; Schubert, Martin C.
Author_Institution :
Fraunhofer Inst. for Solar Energy Syst. (ISE), Freiburg, Germany
Abstract :
A parameterized model is proposed in order to analytically calculate the metallic precipitate-related carrier recombination/lifetime that depends on excess carrier and doping concentration, as well as precipitate size and density in both p- and n-type silicon. The parameterization is based on numerical simulations of recombination at the precipitate-silicon interface, assuming that the dominant physical mechanism is thermionic emission currents due to internal Schottky contacts between metal (silicide) and semiconductor. Application examples and the range of validity of the proposed analytical calculation are discussed.
Keywords :
Schottky barriers; carrier lifetime; doping profiles; electron-hole recombination; elemental semiconductors; numerical analysis; semiconductor-metal boundaries; silicon; thermionic emission; Si; analytical calculation; carrier lifetime; carrier recombination; doping concentration; excess carrier; internal Schottky contacts; metallic precipitates; n-type silicon; numerical simulations; p-type silicon; parameterized model; precipitate size; precipitate-silicon interface; thermionic emission currents; Charge carrier density; Charge carrier lifetime; Doping; Impurities; Iron; Schottky barriers; Silicon; Charge carrier lifetime; metal precipitates; numerical simulation; semiconductor device modeling;
Journal_Title :
Photovoltaics, IEEE Journal of
DOI :
10.1109/JPHOTOV.2015.2438634
