Title :
A 183 GHz Metamorphic HEMT Low-Noise Amplifier With 3.5 dB Noise Figure
Author :
Moschetti, Giuseppe ; Leuther, Arnulf ; Massler, Herman ; Aja, Beatriz ; Rosch, Markus ; Schlechtweg, Michael ; Ambacher, Oliver ; Kangas, Ville ; Genevieve-Perichaud, Marie
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys. IAF, Freiburg, Germany
Abstract :
This letter presents a 183 GHz low-noise amplifier (LNA), designed primarily for water vapor detection in atmosphere. The LNA requirements were defined by MetOp Second Generation (MetOp-SG) Microwave Sounder, Microwave Imager and Ice Cloud Imager instruments. MetOp-SG is the European contribution to operational meteorological observations from polar orbit. This LNA advances the current state-of-the-art for the InGaAs metamorphic high electron mobility transistor (mHEMT) technology. The five-stage common-source MMIC amplifier utilizes transistors with a gate length of 50 nm. On-wafer measurements show a noise figure of 3.5 dB at the operative frequency, about 1 dB lower than previously reported mHEMT LNAs, and a gain of 24±2 dB over the bandwidth 160-200 GHz. The input and output matching are -11 dB and -10 dB, respectively. Moreover, the dc power dissipation at the optimal bias for noise is as low as 24 mW.
Keywords :
III-V semiconductors; MMIC amplifiers; gallium arsenide; gas sensors; high electron mobility transistors; indium compounds; low noise amplifiers; millimetre wave amplifiers; millimetre wave transistors; European contribution; InGaAs; MetOp-SG; bandwidth 160 GHz to 200 GHz; five-stage common-source MMIC amplifier; high electron mobility transistor; ice cloud imager instrument; metamorphic HEMT low noise amplifier; metop second generation; microwave imager instrument; microwave sounder instrument; noise figure 3.5 dB; on-wafer measurements; operational meteorological observations; polar orbit; size 50 nm; water vapor detection; Gain; Layout; MMICs; Noise; Noise measurement; mHEMTs; G-band; low-noise amplifiers (LNAs); metamorphic high electron mobility transistor (mHEMT); monolithic microwave integrated circuit (MMIC);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2015.2451355