DocumentCode
738707
Title
Design of ESD Protection Device for 
-Band Applications in Nanoscale CMOS Process
Author
Chun-Yu Lin ; Rong-Kun Chang
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Normal Univ., Taipei, Taiwan
Volume
62
Issue
9
fYear
2015
Firstpage
2824
Lastpage
2829
Abstract
An inductor-assisted silicon-controlled rectifier (LASCR) device is proposed to protect the gigahertz ICs in nanoscale CMOS technologies from electrostatic discharge (ESD) damages. The LASCR with the assistance of inductor can provide the bidirectional ESD current paths and fine-tune the high-frequency performances. Each LASCR test device has been implemented in a compact size of ~100 × 100 μm2. The LASCR test devices have been successfully verified in a silicon chip to achieve 4-7.5 kV human-body-model ESD robustness with 1-3-dB loss in K/Ka-band (18-40 GHz). With the better performances, the proposed ESD protection device is very suitable for K/Ka-band applications.
Keywords
CMOS integrated circuits; electrostatic discharge; elemental semiconductors; field effect MIMIC; field effect MMIC; inductors; rectifiers; silicon; ESD protection device; K-band applications; Ka-band applications; LASCR device; Si; bidirectional ESD current paths; electrostatic discharge; frequency 18 GHz to 40 GHz; human-body-model; inductor-assisted silicon-controlled rectifier; loss 1 dB to 3 dB; nanoscale CMOS process; silicon chip; voltage 4 kV to 7.5 kV; CMOS integrated circuits; CMOS process; Electrostatic discharges; Inductors; Radio frequency; Robustness; Thyristors; $K$ -band; $Ka$ -band; CMOS; K-band; Ka-band; electrostatic discharge (ESD); silicon-controlled rectifier (SCR); silicon-controlled rectifier (SCR).;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2015.2450225
Filename
7163314
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