Title :
Ni(Ge1−x−ySixSny) Ohmic Contact Formation on p-type Ge0.86Si0.07Sn0.07
Author :
Jun Zheng ; Suyuan Wang ; Xu Zhang ; Zhi Liu ; Chunlai Xue ; Chuanbo Li ; Yuhua Zuo ; Buwen Cheng ; Qiming Wang
Author_Institution :
State Key Lab. on Integrated Optoelectron., Inst. of Semicond., Beijing, China
Abstract :
A single-crystalline Ge0.86Si0.07Sn0.07 alloy was grown on double Ge1-xSnx and Ge buffers on Si (100) using magnetron sputtering. The temperature-dependent contact resistivity (ρc) of Ni/p-type Ge0.86Si0.07Sn0.07 structure was investigated in detail. Good ohmic contacts with ρc of ~1.96 × 10-6 Ω · cm-2 have been demonstrated on p-type Ge0.86Si0.07Sn0.07 after annealing at 350 °C. The low contact resistivity is attributed to the formation of Ni(Ge1-x-ySixSny) complex, and the hole Schottky barrier height of Ni(Ge1-x-ySixSny)/p-type Ge0.86Si0.07Sn0.07 is measured.
Keywords :
Schottky barriers; annealing; germanium alloys; nickel alloys; ohmic contacts; silicon alloys; sputter deposition; tin alloys; Ge buffers; Ni(Ge1-x-ySixSny); annealing; hole Schottky barrier height; magnetron sputtering; ohmic contact formation; p-type structure; single-crystalline alloy; temperature 350 degC; temperature-dependent contact resistivity; Annealing; Conductivity; Nickel; Silicon; Sputtering; Tin; Contact resistivity; Germanium-Silicon-tin alloy (Ge1-x-ySixSny); Silicon photonics; germanium-silicon-tin alloy (Ge1???x???ySixSny); silicon photonics;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2459062
