Title :
Improvement of Negative Bias Stress Stability in Mg0.03Zn0.97O Thin-Film Transistors
Author :
Chieh-Jen Ku ; Wen-Chiang Hong ; Mohsin, Tanvir ; Rui Li ; Ziqing Duan ; Yicheng Lu
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
Abstract :
A small amount of Mg is introduced into ZnO to form the ternary compound Mg0.03Zn0.97O (MZO), which serves as the channel layer of thin-film transistors (TFTs). The MZO TFT shows smaller subthreshold swing of 0.57 V/decade and much better negative bias stress (NBS) stability, which shifts only by -1.21 V in the threshold voltage over its ZnO TFT counterpart (subthreshold swing of 0.79 V/decade; -3.56 V shifts in the threshold voltage after NBS). The superior stability against NBS is mainly attributed to the reduction of donor-like defects associated with ionized oxygen vacancies in the MZO TFT channel.
Keywords :
magnesium compounds; thin film transistors; vacancies (crystal); Mg0.03Zn0.97O; channel layer; donor-like defects; ionized oxygen vacancies; negative bias stress stability; subthreshold swing; ternary compound; thin film transistors; threshold voltage; II-VI semiconductor materials; NIST; Stress; Testing; Thin film transistors; Threshold voltage; Zinc oxide; Mg doping; Negative bias stress (NBS) stability; Oxide TFT; negative bias stress (NBS) stability; oxide TFT;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2459600
