• DocumentCode
    738933
  • Title

    Approach to Multigas Sensing and Modeling on Nanostructure Decorated Porous Silicon Substrates

  • Author

    Laminack, William I. ; Hardy, Neil ; Baker, Caitlin ; Gole, James L.

  • Author_Institution
    School of Physics, Georgia Institute of Technology, Atlanta, GA, USA
  • Volume
    15
  • Issue
    11
  • fYear
    2015
  • Firstpage
    6491
  • Lastpage
    6497
  • Abstract
    An approach to multiple gas sensing on decorated porous silicon (PS) substrates is presented. The simple microelectromechanical systems/nanoelectromechanical systems platform that we have developed facilitates the modeling of the interaction of nanostructured metal oxide islands with the analytes of interest, which are exemplified by NO and NH3. These conductometric sensors operate at room temperature and atmospheric pressure and, as they are forgiving, do not require film-based technology or lithography for their construction. We show that diffusion dominates the conductometric response. The direct response and the derivatives of this response are considered. The first derivative allows a quick evaluation of sensor response and the derivative is linear with concentration. The spectral simulations have been refined to include adsorption/desorption effects of the analyte gas and assess subsequent non-linear interface sensitivities. By including the physics of adsorption/desorption, the simulated sensor response is now a non-linear function of concentration. We model the absorption/diffusion through the use of the Langmuir absorption isotherm and find substantial agreement with experiment for the mixed analyte interactions of NH3 and NO combinations on several metal oxide decorated PS interfaces.
  • Keywords
    Adsorption; Gas detectors; Mathematical model; Metals; Silicon; Temperature sensors; Diffusion modeling; Gas sensors; IHSAB; Langmuir isotherm; Sensor modeling; Sensor packaging; gas sensors; sensor modeling; sensor packaging;
  • fLanguage
    English
  • Journal_Title
    Sensors Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1530-437X
  • Type

    jour

  • DOI
    10.1109/JSEN.2015.2460675
  • Filename
    7165583