DocumentCode :
738939
Title :
High Performance GaN High Electron Mobility Transistors on Low Resistivity Silicon for 
-Band Applications
Author :
Eblabla, A. ; Li, X. ; Thayne, I. ; Wallis, D.J. ; Guiney, I. ; Elgaid, K.
Author_Institution :
Electron. & Nanoscale Eng. Res. Div., Univ. of Glasgow, Glasgow, UK
Volume :
36
Issue :
9
fYear :
2015
Firstpage :
899
Lastpage :
901
Abstract :
This letter reports the RF performance of a 0.3-μm gate length AlGaN/AlN/GaN HEMT realized on a 150-mm diameter low-resistivity (LR) (σ <; 10 Ω · cm) silicon substrate. Short circuit current gain (fT) and maximum frequency of oscillation (fMAX) of 55 and 121 GHz, respectively, were obtained. To our knowledge, these are the highest fT/fMAX values reported to date for GaN HEMTs on LR silicon substrates.
Keywords :
III-V semiconductors; aluminium compounds; elemental semiconductors; gallium compounds; high electron mobility transistors; microwave field effect transistors; short-circuit currents; wide band gap semiconductors; AlGaN-AlN-GaN; AlGaN-AlN-GaN HEMT; LR silicon substrates; RF performance; Si; X-band applications; high electron mobility transistors; low resistivity silicon; short circuit current gain; size 0.3 mum; size 150 mm; Aluminum gallium nitride; Gallium nitride; HEMTs; Radio frequency; Silicon; Substrates; Wide band gap semiconductors; AlGaN/GaN HEMTs; X-band; amplifier; low-resistivity Si (111) substrate;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2015.2460120
Filename :
7165603
Link To Document :
