Title :
A Study of High-Voltage p-Type MOSFET Degradation Under AC Stress
Author :
Dongjun Lee ; Chungje Na ; Chiwoo Lee ; Changsub Lee ; Sunghoi Hur ; Duheon Song ; Junghyuk Choi ; Byoungdeog Choi
Author_Institution :
Memory Div., Samsung Electron. Co., Ltd., Hwasung, South Korea
Abstract :
In this paper, the degradation characteristics of high-voltage (HV) p-type MOSFETs are investigated during negative unipolar ac stress on the gate electrode. The threshold voltage under ac stress is shifted gradually by both the negative-bias temperature-instability mechanism and Fowler-Nordheim degradation. We qualitatively analyze the degradation characteristics of HV p-type MOSFETs under ac stress, and observe the threshold voltage saturation for HV p-type MOSFETs at long ac stress. Based on the effects of temperature and duty cycles, we offer a suitable model of degradation saturation after long ac stress, which is caused by interface trap saturation and recovery during pulse delay timing, which is dependent on thermal activation energy.
Keywords :
MOSFET; electrochemical electrodes; negative bias temperature instability; semiconductor device models; Fowler-Nordheim degradation; duty cycles; gate electrode; high-voltage p-type MOSFET degradation; interface trap recovery; interface trap saturation; negative bias temperature instability mechanism; negative unipolar ac stress; pulse delay timing; temperature cycles; thermal activation energy; threshold voltage saturation; Degradation; Logic gates; MOSFET; Negative bias temperature instability; Stress; Temperature measurement; Threshold voltage; AC stress; Fowler-Nordheim (FN) degradation; Fowler???Nordheim (FN) degradation; high-voltage (HV) p-type MOSFET; negative-bias temperature instability (NBTI); saturation; saturation.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2451003
