A Study of High-Voltage p-Type MOSFET Degradation Under AC Stress

Author

Dongjun Lee ; Chungje Na ; Chiwoo Lee ; Changsub Lee ; Sunghoi Hur ; Duheon Song ; Junghyuk Choi ; Byoungdeog Choi

Author_Institution

Memory Div., Samsung Electron. Co., Ltd., Hwasung, South Korea

Volume

62

Issue

9

fYear

2015

Firstpage

2940

Lastpage

2944

Abstract

In this paper, the degradation characteristics of high-voltage (HV) p-type MOSFETs are investigated during negative unipolar ac stress on the gate electrode. The threshold voltage under ac stress is shifted gradually by both the negative-bias temperature-instability mechanism and Fowler-Nordheim degradation. We qualitatively analyze the degradation characteristics of HV p-type MOSFETs under ac stress, and observe the threshold voltage saturation for HV p-type MOSFETs at long ac stress. Based on the effects of temperature and duty cycles, we offer a suitable model of degradation saturation after long ac stress, which is caused by interface trap saturation and recovery during pulse delay timing, which is dependent on thermal activation energy.

Keywords

MOSFET; electrochemical electrodes; negative bias temperature instability; semiconductor device models; Fowler-Nordheim degradation; duty cycles; gate electrode; high-voltage p-type MOSFET degradation; interface trap recovery; interface trap saturation; negative bias temperature instability mechanism; negative unipolar ac stress; pulse delay timing; temperature cycles; thermal activation energy; threshold voltage saturation; Degradation; Logic gates; MOSFET; Negative bias temperature instability; Stress; Temperature measurement; Threshold voltage; AC stress; Fowler-Nordheim (FN) degradation; Fowler???Nordheim (FN) degradation; high-voltage (HV) p-type MOSFET; negative-bias temperature instability (NBTI); saturation; saturation.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2451003

Filename

7165623