DocumentCode :
73917
Title :
Two-Section Folded-Waveguide Slow-Wave Structure for Terahertz Extended Interaction Oscillator
Author :
Wenxin Liu ; Chao Zhao ; Ke Li ; Yong Wang ; Ziqiang Yang
Author_Institution :
Inst. of Electron., Beijing, China
Volume :
61
Issue :
3
fYear :
2014
fDate :
Mar-14
Firstpage :
902
Lastpage :
908
Abstract :
Extended interaction oscillator (EIO) is a promising terahertz (THz) power source, which has many potential important applications, such as military radar, medical imaging and material science research, and so on. To improve the operation performances of the THz EIO, a novel type of two-section folded waveguide (TSFW) slow wave structure (SWS) is proposed in this paper. The dispersion characteristics for TSFW obtained by an equivalent circuit model are analyzed, and the output characteristics for TSFW EIO are studied and optimized with the help of 3-D particle-in-cell simulation. Comparing with the single section of FW SWS, the remarkable enhancement of output power in the TSFW SWS is observed from 50 up to 130 W. Based on the proposal model, the TSFW is fabricated with a high speed numerical control milling machine and its transmission characteristics are tested. The results of the cold test are in agreement with theoretical predications.
Keywords :
dispersion (wave); slow wave structures; submillimetre wave oscillators; terahertz wave devices; waveguide components; 3D particle-in-cell simulation; EIO; SWS; THz power source; TSFW; dispersion characteristics; equivalent circuit model; high speed numerical control milling machine; material science research; medical imaging; military radar; power 50 mW to 130 mW; terahertz extended interaction oscillator; transmission characteristics; two-section folded-waveguide slow-wave structure; Analytical models; Couplings; Dispersion; Electron beams; Impedance; Integrated circuit modeling; Power generation; 3-D particle-in-cell (PIC) simulation; extended interaction oscillator (EIO); terahertz (THz); two-section folded waveguide (TSFW) slow wave structure (SWS);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2013.2297343
Filename :
6720165
Link To Document :
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