Title :
Effect of Solvent Chelating on Crystal Growth Mechanism of CZTSe Nanoink in Polyetheramine
Author :
Wang, Chi-Jie ; Shei, Shih-Chang ; Chang, Shoou-Jinn
Author_Institution :
Institute of Microelectronics & Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan
Abstract :
This paper reports on the reaction mechanism of Cu2ZnSnSe4 (CZTSe) nanoink via a solvent-thermal reflux method using copper (Cu), zinc (Zn), tin (Sn), and selenium (Se) powders as precursors and polyetheramine as a reaction solvent. The formation of CZTSe nanoparticles in polyetheramine began with the formation of binary phase CuSe2 due to the strong catalysis provided by polyetheramine. This was followed by the formation of binary phase ZnSe crystals. In the final stage, ternary crystals of Cu2SnSe3 transformed into well-dispersed nanocrystals of Cu2ZnSnSe4, which are derived from the characterization of XRD, Raman, and TEM. The size of the crystals was shown to decrease with reaction time due to the emulsification effect of the polyetheramine epoxy group. Quaternary phase CZTSe first appeared at 20 h, and then the composition of the CZTSe tended to become Cu-poor and Zn-rich over time. The proposed reaction mechanism of CZTSe nanoparticles in polyetheramine presented a distinct phase transformation and suitable time-composition properties, which benefited to further solution-based solar cell application.
Keywords :
II-VI semiconductor materials; Nanoparticles; Solvents; X-ray scattering; Zinc compounds; Cu2ZnSnSe4; Quaternary; nanoparticles; polyetheramine; quaternary; reaction mechanism; solvent-thermal;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2015.2460257