Title :
A Submillimeter Wave InP HEMT Multiplier Chain
Author :
Zamora, Alexis ; Mei, Gerry ; Leong, Kevin M. K. H. ; Lange, Mike ; Lee, Jane ; Yoshida, Wayne ; Gorospe, Ben S. ; Padilla, Jose G. ; Deal, William R.
Author_Institution :
Northrop Grumman Corp., Redondo Beach, CA, USA
Abstract :
In this letter, we demonstrate the first 400 GHz multiplier chain with integrated buffer amplifiers through the chain. The x9 multiplier chain uses 25 nm InP HEMT MMIC technology. The chain consists of three packaged MMICs in split-block waveguide packages with each multiplier incorporating an integrated output buffer. We report a peak output of 6.9 mW and greater than 4 mW over a 10% bandwidth.
Keywords :
HEMT integrated circuits; III-V semiconductors; field effect MMIC; frequency multipliers; indium compounds; submillimetre wave amplifiers; InP; MMIC technology; frequency 400 GHz; integrated buffer amplifier; packaged MMIC; power 6.9 mW; size 25 nm; submillimeter wave HEMT multiplier chain; Gain; HEMTs; III-V semiconductor materials; Indium phosphide; MMICs; Power generation; Radio frequency; HEMT; InP; multiplier chain; source; submillimeter; terahertz (THz);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2015.2451364
