DocumentCode :
73922
Title :
A Novel Design for a Memristor-Based or Gate
Author :
Yang Zhang ; Yi Shen ; Xiaoping Wang ; Yanwen Guo
Author_Institution :
Sch. of Autom., Huazhong Univ. of Sci. & Technol., Wuhan, China
Volume :
62
Issue :
8
fYear :
2015
fDate :
Aug. 2015
Firstpage :
781
Lastpage :
785
Abstract :
This brief proposes a logic gate that performs a stateful or logic operation on memristor memory. The presented logic structure concurrently executes an or operation in the nanocrossbar architecture in a single step, which enables a fast logic operation and reduces the number of required memristors. The proposed circuit completes the in situ logic operation on the memristor memory, which alleviates the burden of the processor significantly. Through analysis and simulation, the feasibility of the or operation is demonstrated, and the parameter optimization is analyzed.
Keywords :
logic design; logic gates; memristor circuits; fast logic operation; in situ logic operation; logic gate; logic structure; memristor memory; nanocrossbar architecture; parameter optimization; Computer architecture; Integrated circuit modeling; Logic circuits; Logic gates; Memristors; Microprocessors; Threshold voltage; Material implication; Memristor; OR gate; material implication; memristor; nanocrossbar memory; or gate; stateful logic;
fLanguage :
English
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-7747
Type :
jour
DOI :
10.1109/TCSII.2015.2435354
Filename :
7111287
Link To Document :
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