DocumentCode
739253
Title
Simulation Study of Node-State Transition Effect on the Single-Event Transient
Author
Liu Biwei ; Du Yankang ; Li Zhao ; Li Lei
Author_Institution
Coll. of Comput., Nat. Univ. of Defense Technol., Changsha, China
Volume
15
Issue
3
fYear
2015
Firstpage
467
Lastpage
471
Abstract
Using 3-D technology computer-aided design numerical simulation, we comprehensively analyze the impact of node-state transition on a single-event transient (SET) pulse. Simulation results present that the SET pulsewidth is a function of the node current state and the state transition time. Based on the simulation results, we quantize the difference between the static SET injection and the dynamic SET injection.
Keywords
circuit CAD; integrated circuit design; numerical analysis; radiation hardening (electronics); 3D technology; SET pulsewidth; computer-aided design; dynamic SET injection; node current state; node-state transition effect; numerical simulation; single-event transient; state transition time; static SET injection; Combinational circuits; Inverters; MOSFET; Numerical models; Semiconductor device modeling; Simulation; Thigh; Clock frequency; SET; clock frequency; state transition;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2015.2462129
Filename
7172524
Link To Document