• DocumentCode
    739329
  • Title

    Origin of Anomalous C_{math\\rm {OSS}} Hysteresis in Resonant Converters With Superjunction FETs

  • Author

    Roig, Jaume ; Bauwens, Filip

  • Author_Institution
    ON Semicond. Power Technol. Centre, Oudenarde, Belgium
  • Volume
    62
  • Issue
    9
  • fYear
    2015
  • Firstpage
    3092
  • Lastpage
    3094
  • Abstract
    Output capacitance (COSS) hysteresis has recently been discovered as a new source of power loss in resonant converters with advanced superjunction (SJ) FETs. This brief unveils the physical mechanism responsible for COSS hysteresis by means of mixed-mode simulations. A new physical effect, based on stranded charges, is observed in the SJ-FETs processed by multi-implant multiepitaxy with small cell pitch. The alternative trench-filling epitaxial growth is a process suitable to address the resonant converters due to its inherent immunity to the COSS hysteresis.
  • Keywords
    epitaxial growth; field effect transistors; mixed analogue-digital integrated circuits; resonant power convertors; semiconductor device models; alternative trench-filling epitaxial growth; anomalous output capacitance hysteresis; mixed-mode simulations; multiimplant multiepitaxy; resonant converters; small cell pitch; stranded charges; superjunction FET; Capacitance; Discharges (electric); Energy loss; Field effect transistors; Hysteresis; RLC circuits; Silicon; Hysteresis; output capacitance ( $C_{{mathrm {OSS}}}$ ); output capacitance (COSS); power semiconductor switches; resonant converters; resonant converters.;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2015.2455072
  • Filename
    7173033
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=739329