DocumentCode :
739329
Title :
Origin of Anomalous 
Hysteresis in Resonant Converters With Superjunction FETs
Author :
Roig, Jaume ; Bauwens, Filip
Author_Institution :
ON Semicond. Power Technol. Centre, Oudenarde, Belgium
Volume :
62
Issue :
9
fYear :
2015
Firstpage :
3092
Lastpage :
3094
Abstract :
Output capacitance (COSS) hysteresis has recently been discovered as a new source of power loss in resonant converters with advanced superjunction (SJ) FETs. This brief unveils the physical mechanism responsible for COSS hysteresis by means of mixed-mode simulations. A new physical effect, based on stranded charges, is observed in the SJ-FETs processed by multi-implant multiepitaxy with small cell pitch. The alternative trench-filling epitaxial growth is a process suitable to address the resonant converters due to its inherent immunity to the COSS hysteresis.
Keywords :
epitaxial growth; field effect transistors; mixed analogue-digital integrated circuits; resonant power convertors; semiconductor device models; alternative trench-filling epitaxial growth; anomalous output capacitance hysteresis; mixed-mode simulations; multiimplant multiepitaxy; resonant converters; small cell pitch; stranded charges; superjunction FET; Capacitance; Discharges (electric); Energy loss; Field effect transistors; Hysteresis; RLC circuits; Silicon; Hysteresis; output capacitance ( $C_{{mathrm {OSS}}}$ ); output capacitance (COSS); power semiconductor switches; resonant converters; resonant converters.;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2015.2455072
Filename :
7173033
Link To Document :
