Title :
Correction to “Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier” [Apr 15 318-320]
Author :
Liu, Cheng ; Yang, Shu ; Liu, Shenghou ; Tang, Zhikai ; Wang, Hanxing ; Jiang, Qimeng ; Chen, Kevin J.
Author_Institution :
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong
fDate :
6/1/2015 12:00:00 AM
Abstract :
Al2O3/AlGaN/GaN enhancement-mode (E-mode) metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) featuring a partially recessed (Al)GaN barrier was realized by a fluorine-plasma implantation/etch technique.
Keywords :
Aluminum gallium nitride; Gallium nitride; HEMTs; Thermal stability; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2423611
