Nonlinearity and Asymmetry for Device Selection in Cross-Bar Memory Arrays

Author

An Chen

Author_Institution

Globalfoundries, Santa Clara, CA, USA

Volume

62

Issue

9

fYear

2015

Firstpage

2857

Lastpage

2864

Abstract

Scalable two-terminal selector devices are key technology enablers for cross-bar array (CBA) architectures. Based on an analysis of CBA and sneak path, this paper discusses the essential characteristics of selector devices for the reduction of sneak leakage: nonlinearity and asymmetry. Both characteristics help to increase the resistance of sneak paths and reduce their impact on CBA operations. The reduction of sneak leakage and the improvement of CBA performance by selectors are quantified based on a comprehensive CBA model. The writing and reading operations of a 4-kb CBA are simulated as a case study, to analyze the effect of selector characteristics on CBA operations.

Keywords

random-access storage; cross-bar array architectures; cross-bar memory arrays; device selection asymmetry; device selection nonlinearity; reading operations; scalable two-terminal selector devices; sneak leakage; storage capacity 4 Kbit; writing operations; Junctions; Performance evaluation; Resistance; Schottky diodes; Threshold voltage; Voltage measurement; Writing; Asymmetry; cross-bar array (CBA); memory; nonlinearity; selector devices; selector devices.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2450712

Filename

7175003