Title :
Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs
Author :
Esseni, David ; Pala, Marco G. ; Rollo, Tommaso
Author_Institution :
Dipt. di Ing. Elettr. Gestionale e Meccanica, Univ. of Udine, Udine, Italy
Abstract :
We present a study about of the essential physical elements governing the OFF-state current in MOSFETs and tunnel FETs at truly nanoscale dimensions. By combining semianalytical models and full-quantum self-consistent simulations, we discuss the physical mechanisms responsible of the minimum OFF-current and of the ambipolarity of the current transfer characteristics. Moreover, we revisit the applicability of the natural transistor length as a metric for the short-channel effects and assess the tunnel FETs potential to provide subthreshold swings below 60 mV/decade and better than their MOSFET counterparts for gate lengths approaching 10 nm.
Keywords :
MOSFET; semiconductor device models; tunnel transistors; current transfer characteristics; nanoscale MOSFET; natural transistor length; off-state current; short-channel effects; tunnel FET; Logic gates; MOSFET; Mathematical model; Numerical models; Tunneling; DIBL; III-V materials; III???V materials; MOSFETs; natural length; nonequilibrium Green´s function (NEGF); nonequilibrium Green???s function (NEGF); scaling; subthreshold slope; tunnel FET; tunnel FET.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2458171
