Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs

Author

Esseni, David ; Pala, Marco G. ; Rollo, Tommaso

Author_Institution

Dipt. di Ing. Elettr. Gestionale e Meccanica, Univ. of Udine, Udine, Italy

Volume

62

Issue

9

fYear

2015

Firstpage

3084

Lastpage

3091

Abstract

We present a study about of the essential physical elements governing the OFF-state current in MOSFETs and tunnel FETs at truly nanoscale dimensions. By combining semianalytical models and full-quantum self-consistent simulations, we discuss the physical mechanisms responsible of the minimum OFF-current and of the ambipolarity of the current transfer characteristics. Moreover, we revisit the applicability of the natural transistor length as a metric for the short-channel effects and assess the tunnel FETs potential to provide subthreshold swings below 60 mV/decade and better than their MOSFET counterparts for gate lengths approaching 10 nm.

Keywords

MOSFET; semiconductor device models; tunnel transistors; current transfer characteristics; nanoscale MOSFET; natural transistor length; off-state current; short-channel effects; tunnel FET; Logic gates; MOSFET; Mathematical model; Numerical models; Tunneling; DIBL; III-V materials; III???V materials; MOSFETs; natural length; nonequilibrium Green´s function (NEGF); nonequilibrium Green???s function (NEGF); scaling; subthreshold slope; tunnel FET; tunnel FET.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2458171

Filename

7177065