DocumentCode :
739705
Title :
TCAD Studies on the Determination of Diffusion Length for the Planar-Collector EBIC Configuration With Any Size of the Schottky Contact
Author :
Chee Chin Tan ; Ong, Vincent K. S. ; Radhakrishnan, K.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Volume :
62
Issue :
9
fYear :
2015
Firstpage :
3100
Lastpage :
3103
Abstract :
In this brief, the transient single-contact electron-beam-induced current (SC-EBIC) and the conventional steady-state EBIC modes of the planar-collector configuration that were studied using a Technology Computer Aided Design device simulator are presented. The feasibility of these EBIC data in the extraction of the diffusion length of the planar-collector configuration with any values of surface recombination velocities and any size of the Schottky contact is also presented. The effect of the size of the Schottky contact on steady state and transient EBIC signals as well as the extracted diffusion length and linearization coefficient is discussed in this brief. The EBIC information obtained from the SC-EBIC and the conventional EBIC is found to be able to evaluate the diffusion length accurately regardless of the size of the Schottky contact.
Keywords :
EBIC; Schottky barriers; semiconductor device measurement; surface recombination; technology CAD (electronics); Schottky contact; TCAD; diffusion length; planar-collector EBIC configuration; surface recombination velocities; technology computer aided design device simulator; transient single-contact electron-beam-induced current; Electron beams; Junctions; Radiative recombination; Schottky barriers; Steady-state; Transient analysis; Electron microscopy; semiconductor device measurement; semiconductor materials; simulation; simulation.;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2015.2458988
Filename :
7180363
Link To Document :
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