DocumentCode
739761
Title
Experimental Evidence of Multiple Diffusion Mechanisms in Thin-Film Cu(In,Ga)Se2
Author
Biderman, N.J. ; Novak, Steven W. ; Laursen, T. ; Sundaramoorthy, R. ; Haldar, Pradeep ; Lloyd, J.R.
Author_Institution
Colleges of Nanoscale Sci. & Eng., State Univ. of New York (SUNY), Albany, NY, USA
Volume
5
Issue
5
fYear
2015
Firstpage
1497
Lastpage
1502
Abstract
Lattice and grain boundary diffusions of cadmium in copper indium gallium diselenide (Cu(In,Ga)Se2 or CIGS) thin films were investigated by annealing cadmium into samples of 700-nm CIGS thickness at temperatures between 250 and 300 °C. Diffusion profiles of cadmium were analyzed by dual-beam time-of-flight secondary ion mass spectroscopy (TOF-SIMS). In addition to fast cadmium grain boundary diffusion, experiments revealed cadmium diffusion profiles with two distinct lattice diffusion stages, which could be indicative of simultaneous vacancy and dissociative diffusion mechanisms.
Keywords
annealing; cadmium; copper compounds; gallium compounds; grain boundary diffusion; indium compounds; secondary ion mass spectra; semiconductor thin films; ternary semiconductors; time of flight mass spectra; vacancies (crystal); Cd; Cu(InGa)Se2; TOF-SIMS; annealing; cadmium grain boundary diffusion; copper indium gallium diselenide thin films; dissociative diffusion mechanism; dual-beam time-of-flight secondary ion mass spectroscopy; lattice diffusion stages; multiple diffusion mechanisms; size 700 nm; temperature 250 degC to 300 degC; vacancy diffusion mechanism; Annealing; Cadmium; Cobalt; Copper; Grain boundaries; Sputtering; Surface treatment; Activation energy; cadmium; diffusion processes; grain boundaries; grain size; photovoltaic cells; thin films;
fLanguage
English
Journal_Title
Photovoltaics, IEEE Journal of
Publisher
ieee
ISSN
2156-3381
Type
jour
DOI
10.1109/JPHOTOV.2015.2459911
Filename
7181649
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