Title :
Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies—Part I: Interface Potentials Analytical Model
Author :
Poiroux, T. ; Rozeau, O. ; Scheer, P. ; Martinie, S. ; Jaud, M.A. ; Minondo, M. ; Juge, A. ; Barbe, J.C. ; Vinet, M.
Author_Institution :
Leti, Commissariat a l´Energie Atomique et aux Energies Alternatives, Grenoble, France
Abstract :
A detailed presentation of the latest version of the Leti-UTSOI compact model is provided. Leti-UTSOI2 is the first available model able to describe the behavior of low-doped ultrathin body and buried oxide fully depleted silicon-on-insulator transistors in all bias configurations, including strong forward back bias. In this part, a full analytical calculation of interface potentials, valid for all regimes of independent double-gate device operation, is detailed. This analytical computation, which is the heart of Leti-UTSOI2, provides explicit expressions for all quantities required to build dc and ac core models.
Keywords :
semiconductor device models; silicon-on-insulator; Leti-UTSOI compact model; UTBB-FDSOI technologies; buried oxide fully depleted silicon-on-insulator transistors; interface potentials analytical model; low-doped ultrathin body; Analytical models; Capacitance; Electric potential; Logic gates; Mathematical model; Poisson equations; Transistors; Analytical models; SPICE; compact modeling; fully depleted silicon-on-insulator (FDSOI); independent double-gate; semiconductor device modeling; ultrathin body BOX (UTBB); ultrathin body BOX (UTBB).; ultrathin body and buried oxide (BOX);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2458339
