Title :
ON-state Reliability of Cu Atom Switch Under Current–Temperature Stress
Author :
Tada, Munehiro ; Okamoto, Koichiro ; Sakamoto, Toshitsugu ; Hada, Hiromitsu
Author_Institution :
NEC Corp., Tsukuba, Japan
Abstract :
The dc current-stress tolerance of the ON-state Cu atom switch is evaluated at elevated temperature. It is revealed that the reset-direction current stress causes time-dependent failures, which originate from the E-field-driven diffusion of Cu in the conducting bridge. A new empirical lifetime estimation model, including the Joule heating effect, gives an allowable maximum current per atom switch of Imax = 115 μA, which is large enough to satisfy the requirements for signal routing under currents that are average (18 μA) and peak (63 μA) in the reconfigurable switch block operated at 500 MHz at 125 °C.
Keywords :
bridge circuits; copper; failure analysis; integrated circuit reliability; switches; Cu; Cu atom switch; E-field-driven diffusion; Joule heating effect; conducting bridge; current-temperature stress; dc current-stress tolerance; empirical lifetime estimation; frequency 500 MHz; on-state reliability; reconfigurable switch block; reset-direction current stress; signal routing; temperature 125 degC; time-dependent failures; Bridge circuits; Electrodes; Optical switches; Reliability; Resistance; Stress; Atom switch; field-programmable gate array; nonvolatile memory; polymer; programmable logic device; reconfigurable logic; solid electrolyte; solid electrolyte.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2451139
