ON-state Reliability of Cu Atom Switch Under Current–Temperature Stress

Author

Tada, Munehiro ; Okamoto, Koichiro ; Sakamoto, Toshitsugu ; Hada, Hiromitsu

Author_Institution

NEC Corp., Tsukuba, Japan

Volume

62

Issue

9

fYear

2015

Firstpage

2992

Lastpage

2997

Abstract

The dc current-stress tolerance of the ON-state Cu atom switch is evaluated at elevated temperature. It is revealed that the reset-direction current stress causes time-dependent failures, which originate from the E-field-driven diffusion of Cu in the conducting bridge. A new empirical lifetime estimation model, including the Joule heating effect, gives an allowable maximum current per atom switch of I_max = 115 μA, which is large enough to satisfy the requirements for signal routing under currents that are average (18 μA) and peak (63 μA) in the reconfigurable switch block operated at 500 MHz at 125 °C.

Keywords

bridge circuits; copper; failure analysis; integrated circuit reliability; switches; Cu; Cu atom switch; E-field-driven diffusion; Joule heating effect; conducting bridge; current-temperature stress; dc current-stress tolerance; empirical lifetime estimation; frequency 500 MHz; on-state reliability; reconfigurable switch block; reset-direction current stress; signal routing; temperature 125 degC; time-dependent failures; Bridge circuits; Electrodes; Optical switches; Reliability; Resistance; Stress; Atom switch; field-programmable gate array; nonvolatile memory; polymer; programmable logic device; reconfigurable logic; solid electrolyte; solid electrolyte.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2451139

Filename

7185397