DocumentCode
740091
Title
Reply to “Comment on ‘A Compact Analytic Model of the Strain Field Induced by Through ilicon Vias”’
Author
Sun-Rong Jan ; Tien-Pei Chou ; Che-Yu Yeh ; Chee Wee Liu ; Goldstein, Robert V. ; Gorodtsov, Valentin A. ; Shushpannikov, Pavel S.
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume
62
Issue
9
fYear
2015
Firstpage
3106
Lastpage
3106
Abstract
The comment adds the results of 2 × 2 TSVs which is an extension of our 2-TSV case, and the clarification of no thermal strain effect on mobility. There are no contradictions with our original paper at all. Note that for the mobility calculation, the temperature dependence can be considered by the band parameters and phonon scattering [1].
Keywords
three-dimensional integrated circuits; band parameters; compact analytic model; mobility calculation; phonon scattering; strain field; temperature dependence; through silicon vias; Analytical models; Electrical engineering; Photonics; Silicon; Strain; Stress; Thermal stresses;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2015.2464732
Filename
7194787
Link To Document