Title :
Reply to “Comment on ‘A Compact Analytic Model of the Strain Field Induced by Through ilicon Vias”’
Author :
Sun-Rong Jan ; Tien-Pei Chou ; Che-Yu Yeh ; Chee Wee Liu ; Goldstein, Robert V. ; Gorodtsov, Valentin A. ; Shushpannikov, Pavel S.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The comment adds the results of 2 × 2 TSVs which is an extension of our 2-TSV case, and the clarification of no thermal strain effect on mobility. There are no contradictions with our original paper at all. Note that for the mobility calculation, the temperature dependence can be considered by the band parameters and phonon scattering [1].
Keywords :
three-dimensional integrated circuits; band parameters; compact analytic model; mobility calculation; phonon scattering; strain field; temperature dependence; through silicon vias; Analytical models; Electrical engineering; Photonics; Silicon; Strain; Stress; Thermal stresses;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2464732
