• DocumentCode
    740153
  • Title

    Experimentally verified drain-current model for variable barrier transistor

  • Author

    Moldovan, O. ; Lime, F. ; Barraud, S. ; Smaani, B. ; Latreche, S. ; Iñiguez, B.

  • Author_Institution
    Dept. of Electron., Electr. & Autom., Eng., Univ. Rovira & Virgili, Tarragona, Spain
  • Volume
    51
  • Issue
    17
  • fYear
    2015
  • Firstpage
    1364
  • Lastpage
    1366
  • Abstract
    A simple analytical model for the computation of the drain current in a new type of transistor is presented, the variable barrier transistor (VBT). A good agreement between the results and experimental data, from two different VBTs, proves the accuracy of this model. The experimental measurements show that the ION/IOFF ratio of this device can be improved, as compared with the classical transistor. The model correctly reproduces these results.
  • Keywords
    MOSFET; semiconductor device models; MOSFET; VBT; analytical model; drain-current model; experimental verification; metal-oxide-semiconductor field-effect transistor; variable barrier transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2015.1475
  • Filename
    7199728
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=740153