Title :
A Comparative Evaluation of SiC Power Devices for High-Performance Domestic Induction Heating
Author :
Sarnago, Hector ; Lucia, Oscar ; Burdio, Jose M.
Author_Institution :
Dept. of Electron. Eng. & Commun., Univ. of Zaragoza, Zaragoza, Spain
Abstract :
This paper presents a comparative evaluation of silicon carbide power devices for the domestic induction heating (IH) application, which currently has a major industrial, economic and social impact. The compared technologies include MOSFETs, normally on and normally off JFETs, as well as BJTs. These devices have been compared according to different figure-of-merit evaluating conduction and switching performance, efficiency, impact of temperature, as well as other driving and protection issues. To perform the proposed evaluation, a versatile test platform has been developed. As a result of this study, several differential features are identified and discussed, taking into account the pursued induction heating application.
Keywords :
MOSFET; induction heating; junction gate field effect transistors; silicon compounds; BJT; MOSFET; SiC; comparative evaluation; figure-of-merit evaluating conduction; high-performance domestic induction heating; silicon carbide power devices; switching performance; versatile test platform; Electromagnetic heating; JFETs; MOSFET; Performance evaluation; Silicon carbide; Switches; Topology; Induction heating; Induction heating (IH); Silicon Carbide; Wide Bandgap Semiconductors; silicon carbide (SiC); wide bandgap semiconductors;
Journal_Title :
Industrial Electronics, IEEE Transactions on
DOI :
10.1109/TIE.2015.2405057
