DocumentCode :
740300
Title :
Hot-Carrier Solar Cells With Quantum Well and Dot Energy Selective Contacts
Author :
Shanhe Su ; Tianjun Liao ; Xiaohang Chen ; Guozhen Su ; Jincan Chen
Author_Institution :
Dept. of Phys., Xiamen Univ., Xiamen, China
Volume :
51
Issue :
9
fYear :
2015
Firstpage :
1
Lastpage :
8
Abstract :
In this paper, we simulate hot-carrier solar cells (HCSCs) with quantum well and dot energy selective contacts (ESCs) and derive the power outputs and efficiencies of HCSCs, including three energy loss mechanisms. The effects of the shape of the electron energy spectrum on the electric current densities and heat flux densities of HCSCs are discussed based on the ballistic transport theory. Performance characteristics pertaining to the extraction energy level and the transmission energy width are revealed. The key parameters of HCSCs are optimally designed. The results obtained show that thermalization losses due to non-ideal ESCs are one of the main energy dissipation mechanisms decreasing the efficiency of HCSCs and the performance of an HCSC can be more significantly improved by using quantum dot ESCs than quantum well ESCs.
Keywords :
ballistic transport; current density; electric current; electron energy loss spectra; hot carriers; quantum dots; quantum wells; solar cells; ballistic transport theory; electric current density; electron energy spectrum; energy dissipation mechanisms; extraction energy level; heat flux density; hot-carrier solar cells; nonideal ESC; performance characteristics; power outputs; quantum dot energy selective contacts; quantum well energy selective contacts; thermalization loss; three energy loss mechanisms; transmission energy width; Charge carrier processes; Electrodes; Hot carriers; Photovoltaic cells; Quantum dots; Radiative recombination; Reservoirs; Energy loss mechanism; Energy selective contact; Hot-carrier solar cell; Parametric optimum design; Quantum dot; Quantum well; energy loss mechanism; energy selective contact; parametric optimum design; quantum dot; quantum well;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2015.2469152
Filename :
7206523
Link To Document :
بازگشت