• DocumentCode
    740595
  • Title

    Broadband complementary metal-oxide semiconductor phase shifter with 6-bit resolution based on all-pass networks

  • Author

    Hsiao-Yun Li ; Jia-Shiang Fu

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
  • Volume
    9
  • Issue
    11
  • fYear
    2015
  • Firstpage
    1144
  • Lastpage
    1151
  • Abstract
    Multi-stage all-pass networks can be used to realise broadband phase shifters with low phase error. In this study, single-stage and two-stage all-pass networks with internal switched capacitors are investigated. Potentials and limitations of using the all-pass networks with internal switched capacitors for phase shifter design are examined. On the basis of the single-stage and two-stage all-pass networks, a fully-differential digital phase shifter with 6-bit resolution is designed. The digital phase shifter is implemented using a 0.18-μm complementary metal-oxide semiconductor process. The chip area is 2.80 × 1.75 mm2. Measurement results show that minimum root-mean-square phase error of 2° is achieved from 2.19 to 2.82 GHz, which translates into a bandwidth (BW) of 25%. The average insertion loss is 14.6 dB at the design frequency of 2.4 GHz. Over the entire BW, the return loss is greater than 9.2 dB and the amplitude error is within ±1 dB.
  • Keywords
    MOSFET; broadband networks; mean square error methods; phase shifters; switched capacitor networks; all-pass networks; broadband complementary metal-oxide semiconductor phase shifter; frequency 2.19 GHz to 2.82 GHz; internal switched capacitors; loss 14.6 dB; metal-oxide semiconductor process; minimum-root -mean-square phase error; multistage all-pass networks; phase shifter design;
  • fLanguage
    English
  • Journal_Title
    Microwaves, Antennas & Propagation, IET
  • Publisher
    iet
  • ISSN
    1751-8725
  • Type

    jour

  • DOI
    10.1049/iet-map.2014.0687
  • Filename
    7214407