DocumentCode
740595
Title
Broadband complementary metal-oxide semiconductor phase shifter with 6-bit resolution based on all-pass networks
Author
Hsiao-Yun Li ; Jia-Shiang Fu
Author_Institution
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
Volume
9
Issue
11
fYear
2015
Firstpage
1144
Lastpage
1151
Abstract
Multi-stage all-pass networks can be used to realise broadband phase shifters with low phase error. In this study, single-stage and two-stage all-pass networks with internal switched capacitors are investigated. Potentials and limitations of using the all-pass networks with internal switched capacitors for phase shifter design are examined. On the basis of the single-stage and two-stage all-pass networks, a fully-differential digital phase shifter with 6-bit resolution is designed. The digital phase shifter is implemented using a 0.18-μm complementary metal-oxide semiconductor process. The chip area is 2.80 × 1.75 mm2. Measurement results show that minimum root-mean-square phase error of 2° is achieved from 2.19 to 2.82 GHz, which translates into a bandwidth (BW) of 25%. The average insertion loss is 14.6 dB at the design frequency of 2.4 GHz. Over the entire BW, the return loss is greater than 9.2 dB and the amplitude error is within ±1 dB.
Keywords
MOSFET; broadband networks; mean square error methods; phase shifters; switched capacitor networks; all-pass networks; broadband complementary metal-oxide semiconductor phase shifter; frequency 2.19 GHz to 2.82 GHz; internal switched capacitors; loss 14.6 dB; metal-oxide semiconductor process; minimum-root -mean-square phase error; multistage all-pass networks; phase shifter design;
fLanguage
English
Journal_Title
Microwaves, Antennas & Propagation, IET
Publisher
iet
ISSN
1751-8725
Type
jour
DOI
10.1049/iet-map.2014.0687
Filename
7214407
Link To Document