DocumentCode :
740897
Title :
Achievement of Large Normalized Delay Bandwidth Product by Exciting Electromagnetic-Induced Transparency in Plasmonic Waveguide
Author :
Zafar, Rukhsar ; Salim, Mohammad
Author_Institution :
Department of Electronics and Communication Engineering, Malviya National Institute of Technology, Jaipur, India
Volume :
51
Issue :
10
fYear :
2015
Firstpage :
1
Lastpage :
6
Abstract :
In this paper, we have generated an effect of electromagnetic-induced transparency (EIT)-like transmission in a pair of resonators coupled to a metal–insulator–metal waveguide. Resonators are separated by the metallic nanoslit. By controlling single parameter (i.e., the width of the metallic slit), the device is made to exhibit EIT-like transmission. EIT is the result of destructive interference between two resonating modes, which leads to an asymmetrical-shaped resonance called Fano resonance. EIT is generally accompanied with sharp dispersion that reduces the velocity of light near the resonance. The slow-light characteristics of the device are also investigated. An ultra large value of group index ( {n}_{g}=117.06 ) and a large value of normalized delay bandwidth product (NDBP = 0.88) is obtained over an ultra large bandwidth ( \\Delta f=1.39 THz). Furthermore, it is theoretically predicted that asymmetry parameter ( q ) of Fano resonance experiences a sign reversal when resonances are swept each other in the tuning process. This reversible Fano resonance and slow-light nature of proposed device open up the avenues for designing on-chip optical buffers, switches, modulators, and so on.
Keywords :
Bandwidth; Couplings; Optical buffering; Optical resonators; Optical waveguides; Plasmons; Resonant frequency; Asymmetry parameter; Electromagnetic Induced Transparency; Electromagnetic induced transparency; Fano resonance; Group index; Metal- Insulator-metal (MIM); Normalized Delay Bandwidth Product; asymmetry parameter; group index; metalinsulator-metal (MIM); normalized delay bandwidth product;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2015.2472979
Filename :
7225099
Link To Document :
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