DocumentCode
741166
Title
Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers
Author
Alhashim, H.H. ; Khan, M.Z.M. ; Majid, M.A. ; Ng, T.K. ; Ooi, B.S.
Author_Institution
Photonics Lab., King Abdullah Univ. of Sci. & Technol., Thuwal, Saudi Arabia
Volume
51
Issue
18
fYear
2015
Firstpage
1444
Lastpage
1445
Abstract
Impurity free vacancy disordering induced highly intermixed InAs/GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ~1070-1190 nm. The non-coated facet Fabry-Pe̅rot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (~50 cm-1), suitable for applications in frequency doubled green-yellow-orange laser realisation, gas sensing, metrology etc.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser tuning; quantum dot lasers; vacancies (crystal); InAs-GaAs; device characteristics; high gain; high internal quantum effi- ciency; high power; impurity free vacancy disordering; post growth intermixed quantum-dot lasers; wavelength 1070 nm to 1190 nm; wavelength tuned lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2015.1803
Filename
7229567
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