Thin-Copper-Metal Interconnection Thermomigration Analysis in ESD Regime

Author

Di Biccari, Leonardo ; Cerati, Lorenzo ; Pozzobon, Fiorella ; Zullino, Lucia ; Morin, Sonia ; Pizzo, Giansalvo ; Boroni, Andrea ; Andreini, Antonio

Author_Institution

STMicroelectron., Agrate Brianza, Italy

Volume

15

Issue

3

fYear

2015

Firstpage

280

Lastpage

288

Abstract

Technological scaling poses severe constraints on the design of metal interconnections, particularly for ESD protection network routing in advanced smart-power technologies. A detailed analysis of thin-interconnection failure mechanisms under high power pulses and their related root causes is mandatory. In this paper, this analysis is illustrated using characterizations, failure analyses, and 3-D TCAD physical simulations data.

Keywords

copper; electrostatic discharge; failure analysis; integrated circuit interconnections; network routing; technology CAD (electronics); 3D TCAD physical simulations data; Cu; ESD protection network routing; ESD regime; advanced smart power technology; failure analysis; technological scaling; thermomigration analysis; thin-copper-metal interconnection; Degradation; Electrostatic discharges; Metals; Resistance; Stress; Strips; Temperature measurement; Copper metal interconnections; electrostatic discharges; thermomigration;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2015.2463071

Filename

7235012