DocumentCode
74148
Title
Enhanced Performance in Cu(In,Ga)Se 
Solar Cells Fabricated by the Two-Step Selenization Process With a Potassium Fluoride Postdeposition Treatment
Author
Mansfield, Lorelle M. ; Noufi, Rommel ; Muzzillo, Christopher P. ; DeHart, Clay ; Bowers, Karen ; To, Bobby ; Pankow, Joel W. ; Reedy, Robert C. ; Ramanathan, Kannan
Author_Institution
Nat. Renewable Energy Lab., Golden, CO, USA
Volume
4
Issue
6
fYear
2014
fDate
Nov. 2014
Firstpage
1650
Lastpage
1654
Abstract
Cu(In,Ga)Se2 (CIGS) solar cells fabricated with twostep selenization processes commonly suffer from low open-circuit voltage (Voc). We found that the Voc of solar cells made from selenized Cu/Ga/In stacked metal precursors can be increased by employing a potassium fluoride (KF) postdeposition treatment (PDT). This study presents a comparison of films and resulting devices with and without the KF PDT. By including the KF PDT, an 18.6%-efficient CIGS device with a Voc of 0.709 V was fabricated using a two-step selenization process.
Keywords
copper compounds; gallium compounds; indium compounds; semiconductor growth; semiconductor thin films; solar cells; ternary semiconductors; vacuum deposition; CIGS solar cells; Cu(InGa)Se2; low open-circuit voltage; metal precursors; potassium fluoride postdeposition treatment; two-step selenization processes; Copper compounds; Performance evaluation; Photovoltaic cells; Photovoltaic systems; Surface treatment; Thin film devices; Copper compounds; Cu(In, Ga)Se2; current–voltage characteristics; current??voltage characteristics; photovoltaic cells; potassium fluoride postdeposition treatment; thin films;
fLanguage
English
Journal_Title
Photovoltaics, IEEE Journal of
Publisher
ieee
ISSN
2156-3381
Type
jour
DOI
10.1109/JPHOTOV.2014.2354259
Filename
6901217
Link To Document