• DocumentCode
    741566
  • Title

    Comprehensive Methodology for the Statistic of SRAM Vmin

  • Author

    Pompl, Thomas ; Strasser, Rudolf ; Drexl, Stefan ; Ostermayr, Martin

  • Author_Institution
    Intel Commun. GmbH, Neubiberg, Germany
  • Volume
    15
  • Issue
    3
  • fYear
    2015
  • Firstpage
    289
  • Lastpage
    297
  • Abstract
    In this paper, a comprehensive methodology for the statistic of SRAM Vmin is presented. A plotting method for the linearization of the statistical distributions is proposed, and methodologies for size scaling and statistical extrapolations are developed. Many analogies to the established statistical framework for time-dependent dielectric breakdown are found.
  • Keywords
    SRAM chips; statistical distributions; SRAM; comprehensive methodology; linearization; plotting method; size scaling; statistical extrapolations; time-dependent dielectric breakdown; Arrays; Density functional theory; Extrapolation; SRAM cells; Statistical analysis; Statistical distributions; Gumbel; SRAM; TDDB; Weibull; extreme value statistic;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2015.2429792
  • Filename
    7101825