Title :
A 30/35 GHz Dual-Band Transmitter for Phased Arrays in Communication/Radar Applications
Author :
Yu Pei ; Ying Chen ; Leenaerts, Domine M. W. ; van Roermund, Arthur H. M.
Author_Institution :
NXP Semicond., Eindhoven, Netherlands
fDate :
7/1/2015 12:00:00 AM
Abstract :
A fully integrated single-channel transmitter is proposed for 30/35 GHz dual-band operation for communication/radar phased array systems. Implemented in a 0.25 μm BiCMOS technology, the transmitter achieves 10° phase shift resolution and 5 bit amplitude resolution suitable for advanced beamforming algorithms for suppression and nulling of side lobes. The integration covers from the baseband I/Q modulation to the RF output, including a low phase noise on-chip VCO and dual-band LO generation circuitry. An RF output power of > +14.5 dBm is achieved in both frequency bands by a linear power amplifier. The core circuit occupies a die area of 1.1 mm 2 and consumes 222-241 mA current from a 3.3 V supply.
Keywords :
BiCMOS integrated circuits; array signal processing; microwave circuits; power amplifiers; radio transmitters; voltage-controlled oscillators; BiCMOS technology; baseband I/Q modulation; beamforming algorithms; communication; current 222 mA to 241 mA; dual-band LO generation circuitry; dual-band transmitter; frequency 30 GHz; frequency 35 GHz; linear power amplifier; low phase noise; on-chip VCO; phased arrays; radar phased array systems; single-channel transmitter; size 0.25 mum; voltage 3.3 V; Dual band; Mixers; Phased arrays; Radio frequency; Transmitters; Tuning; Voltage-controlled oscillators; Beamforming; Ka-band; dual band; millimeter-wave integrated circuits; phase shifters; phased arrays; power amplifiers; quadrature amplitude modulation; voltage-controlled oscillators;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2015.2412689
