DocumentCode :
742779
Title :
Graphene Electronics: Materials, Devices, and Circuits
Author :
Yanqing Wu ; Farmer, Damon B. ; Fengnian Xia ; Avouris, Phaedon
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume :
101
Issue :
7
fYear :
2013
fDate :
7/1/2013 12:00:00 AM
Firstpage :
1620
Lastpage :
1637
Abstract :
Graphene is a 2-D atomic layer of carbon atoms with unique electronic transport properties such as a high Fermi velocity, an outstanding carrier mobility, and a high carrier saturation velocity, which make graphene an excellent candidate for advanced applications in future electronics. In particular, the potential of graphene in high-speed analog electronics is currently being extensively explored. In this paper, we discuss briefly the basic electronic structure and transport properties of graphene, its large scale synthesis, the role of metal-graphene contact, field-effect transistor (FET) device fabrication (including the issues of gate insulators), and then focus on the electrical characteristics and promise of high-frequency graphene transistors with record-high cutoff frequencies, maximum oscillation frequencies, and voltage gain. Finally, we briefly discuss the first graphene integrated circuits (ICs) in the form of mixers and voltage amplifiers.
Keywords :
Fermi level; carrier mobility; electronic structure; field effect transistors; graphene; mixers (circuits); power amplifiers; semiconductor device manufacture; 2D atomic layer; FET device fabrication; Fermi velocity; carbon atoms; carrier mobility; carrier saturation velocity; electrical characteristics; electronic structure; electronic transport property; field-effect transistor device fabrication; future electronics; gate insulators; graphene electronics; graphene integrated circuits; high-frequency graphene transistors; high-speed analog electronics; large scale synthesis; metal-graphene contact; mixers; oscillation frequency; record-high cutoff frequency; voltage amplifiers; voltage gain; Electrodes; Field effect transistors; Gain measurement; Graphene; Integrated circuits; Materials; Nanoelectronics; Scattering; Transistors; Voltage control; Current gain; field-effect transistor (FET); graphene analog integrated circuits (ICs); graphene nanoelectronics; power gain; voltage gain;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/JPROC.2013.2260311
Filename :
6519298
Link To Document :
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