DocumentCode :
742816
Title :
Research on CMOS mm-wave circuits and systems for wireless communications
Author :
Jia Haikun ; Chi Baoyong ; Kuang Lixue ; Yu Xiaobao ; Chen Lei ; Zhu Wei ; Wei Meng ; Song Zheng ; Wang Zhihua
Author_Institution :
Tsinghua Univ., Beijing, China
Volume :
12
Issue :
5
fYear :
2015
fDate :
5/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
13
Abstract :
This paper discusses some challenges in the design of millimeter-wave (mmwave) circuits and systems for 5th generation (5G) wireless systems in CMOS process. The properties of some passive and active devices such as inductors, capacitors, transmission lines, transformers and transistors in mm-wave frequency band are discussed. Self-healing technique dealing with PVT variation, resonant mode switching technique to enhance frequency tuning range of voltage controlled oscillator (VCO) and dual mode technique for power amplifier (PA) efficiency enhancement are introduced. At last, A fully-integrated 60 GHz 5 Gb/s QPSK transceiver with the transmit/receive (T/R) switch in 65nm CMOS process is introduced. The measured error vector magnitude (EVM) of the TX is -21.9 dB while the bit error rate (BER) of the RX with a -52 dBm sine-wave input is below 8e-7 when transmitting/receiving 5 Gb/s data. The transceiver is powered by 1.0 V and 1.2 V supply (except the phase-frequency detector and charge-pump in the frequency synthesizer which are powered by 2.5 V supply) and consumes 135 mW in TX mode and 176 mW in RX mode.
Keywords :
CMOS integrated circuits; circuit tuning; field effect MIMIC; frequency synthesizers; millimetre wave power amplifiers; optical transceivers; quadrature phase shift keying; 5th generation wireless systems; CMOS mm-wave circuits; active devices; bit error rate; bit rate 5 Gbit/s; capacitors; dual mode technique; error vector magnitude; frequency 60 GHz; frequency tuning range; fully-integrated QPSK transceiver; inductors; millimeter-wave circuits; mm-wave frequency band; passive devices; power 135 mW to 176 mW; power amplifier efficiency enhancement; resonant mode switching technique; self-healing technique; size 65 nm; transformers; transistors; transmission lines; transmit/receive switch; voltage 1 V to 2.5 V; voltage controlled oscillator; wireless communications; CMOS integrated circuits; CMOS process; Capacitors; Inductors; Integrated circuit modeling; Power transmission lines; Wireless communication; CMOS; PA; VCO; devices; mm-wave; self-healing; transceiver;
fLanguage :
English
Journal_Title :
Communications, China
Publisher :
ieee
ISSN :
1673-5447
Type :
jour
DOI :
10.1109/CC.2015.7112031
Filename :
7112031
Link To Document :
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