Research on CMOS mm-wave circuits and systems for wireless communications

Author

Jia Haikun ; Chi Baoyong ; Kuang Lixue ; Yu Xiaobao ; Chen Lei ; Zhu Wei ; Wei Meng ; Song Zheng ; Wang Zhihua

Author_Institution

Tsinghua Univ., Beijing, China

Volume

12

Issue

5

fYear

2015

fDate

5/1/2015 12:00:00 AM

Firstpage

1

Lastpage

13

Abstract

This paper discusses some challenges in the design of millimeter-wave (mmwave) circuits and systems for 5th generation (5G) wireless systems in CMOS process. The properties of some passive and active devices such as inductors, capacitors, transmission lines, transformers and transistors in mm-wave frequency band are discussed. Self-healing technique dealing with PVT variation, resonant mode switching technique to enhance frequency tuning range of voltage controlled oscillator (VCO) and dual mode technique for power amplifier (PA) efficiency enhancement are introduced. At last, A fully-integrated 60 GHz 5 Gb/s QPSK transceiver with the transmit/receive (T/R) switch in 65nm CMOS process is introduced. The measured error vector magnitude (EVM) of the TX is -21.9 dB while the bit error rate (BER) of the RX with a -52 dBm sine-wave input is below 8e-7 when transmitting/receiving 5 Gb/s data. The transceiver is powered by 1.0 V and 1.2 V supply (except the phase-frequency detector and charge-pump in the frequency synthesizer which are powered by 2.5 V supply) and consumes 135 mW in TX mode and 176 mW in RX mode.

Keywords

CMOS integrated circuits; circuit tuning; field effect MIMIC; frequency synthesizers; millimetre wave power amplifiers; optical transceivers; quadrature phase shift keying; 5th generation wireless systems; CMOS mm-wave circuits; active devices; bit error rate; bit rate 5 Gbit/s; capacitors; dual mode technique; error vector magnitude; frequency 60 GHz; frequency tuning range; fully-integrated QPSK transceiver; inductors; millimeter-wave circuits; mm-wave frequency band; passive devices; power 135 mW to 176 mW; power amplifier efficiency enhancement; resonant mode switching technique; self-healing technique; size 65 nm; transformers; transistors; transmission lines; transmit/receive switch; voltage 1 V to 2.5 V; voltage controlled oscillator; wireless communications; CMOS integrated circuits; CMOS process; Capacitors; Inductors; Integrated circuit modeling; Power transmission lines; Wireless communication; CMOS; PA; VCO; devices; mm-wave; self-healing; transceiver;

fLanguage

English

Journal_Title

Communications, China

Publisher

ieee

ISSN

1673-5447

Type

jour

DOI

10.1109/CC.2015.7112031

Filename

7112031