Title :
Multistate Register Based on Resistive RAM
Author :
Patel, Ravi ; Kvatinsky, Shahar ; Friedman, Eby G. ; Kolodny, Avinoam
Author_Institution :
Dept. of Electr. Eng. & Comput. Eng., Univ. of Rochester, Rochester, NY, USA
Abstract :
In recent years, memristive technologies, such as resistive random access memory (RRAM), have emerged. These technologies are usually considered as alternates for static RAM, dynamic RAM, and Flash. In this paper, a novel digital circuit, the multistate register, is proposed. The multistate register is different from conventional types of memory, and is used to store multiple data bits, where only a single bit is active and the remaining data bits are idle. The active bit is stored within a CMOS flip flop, while the idle bits are stored in an RRAM crossbar co-located with the flip flop. It is demonstrated that additional states require an area overhead of 1.4% per state for a 64-state register. The use of multistate registers as pipeline registers is demonstrated for a novel multithreading architecture-continuous flow multithreading (CFMT), where the total area overhead in the CPU pipeline is only 2.5% for 16 threads compared with a single thread CMOS pipeline. The use of multistate registers in the CFMT microarchitecture enables higher performance processors (40% average performance improvement) with relatively low energy (6.5% average energy reduction) and area overhead.
Keywords :
CMOS memory circuits; flip-flops; memristor circuits; resistive RAM; CMOS flip flop; memristive technologies; multistate register; multithreading architecture-continuous flow multithreading; pipeline registers; resistive RAM; resistive random access memory; CMOS integrated circuits; Memristors; Metals; Pipelines; Random access memory; Registers; Resistance; Flip flop; memristive device; memristor; multithreading; resistive random access memory (RRAM);
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
DOI :
10.1109/TVLSI.2014.2347926