DocumentCode
742844
Title
Graphene Growth and Device Integration
Author
Colombo, Luigi ; Wallace, Robert M. ; Ruoff, Rodney S.
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
Volume
101
Issue
7
fYear
2013
fDate
7/1/2013 12:00:00 AM
Firstpage
1536
Lastpage
1556
Abstract
Graphene has been introduced to the electronics community as a potentially useful material for scaling electronic devices to meet low-power and high-performance targets set by the semiconductor industry international roadmap, radio-frequency (RF) devices, and many more applications. Growth and integration of graphene for any device is challenging and will require significant effort and innovation to address the many issues associated with integrating the monolayer, chemically inert surface with metals and dielectrics. In this paper, we review the growth and integration of graphene for simple field-effect transistors and present physical and electrical data on the integrated graphene with metals and dielectrics.
Keywords
field effect transistors; graphene; semiconductor industry; C; device integration; electronics community; field effect transistors; graphene growth; monolayer; radiofrequency devices; semiconductor industry; Chemical vapor deposition; Electrochemical processes; Graphene; Photoelectron microscopy; Raman scattering; Spectroscopy; Substrates; Surface treatment; X-ray scattering; Chemical vapor deposition (CVD); Raman spectroscopy; X-ray photoelectron spectroscopy; electrochemical transfer; graphene; mobility;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/JPROC.2013.2260114
Filename
6519931
Link To Document