• DocumentCode
    742844
  • Title

    Graphene Growth and Device Integration

  • Author

    Colombo, Luigi ; Wallace, Robert M. ; Ruoff, Rodney S.

  • Author_Institution
    Texas Instrum. Inc., Dallas, TX, USA
  • Volume
    101
  • Issue
    7
  • fYear
    2013
  • fDate
    7/1/2013 12:00:00 AM
  • Firstpage
    1536
  • Lastpage
    1556
  • Abstract
    Graphene has been introduced to the electronics community as a potentially useful material for scaling electronic devices to meet low-power and high-performance targets set by the semiconductor industry international roadmap, radio-frequency (RF) devices, and many more applications. Growth and integration of graphene for any device is challenging and will require significant effort and innovation to address the many issues associated with integrating the monolayer, chemically inert surface with metals and dielectrics. In this paper, we review the growth and integration of graphene for simple field-effect transistors and present physical and electrical data on the integrated graphene with metals and dielectrics.
  • Keywords
    field effect transistors; graphene; semiconductor industry; C; device integration; electronics community; field effect transistors; graphene growth; monolayer; radiofrequency devices; semiconductor industry; Chemical vapor deposition; Electrochemical processes; Graphene; Photoelectron microscopy; Raman scattering; Spectroscopy; Substrates; Surface treatment; X-ray scattering; Chemical vapor deposition (CVD); Raman spectroscopy; X-ray photoelectron spectroscopy; electrochemical transfer; graphene; mobility;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/JPROC.2013.2260114
  • Filename
    6519931