${\hbox {In}}_{2} {\hbox {O}}_{3}$ Thin Film Paper Transistors

In this work, we report on the fabrication of hybrid n-channel thin film transistors using paper as substrate and gate insulator, and indium oxide (In₂O₃) thin films as channel layer, and contacts for the source, drain and gate respectively. Capacitor paper having 10 μm thickness was used. In₂O₃ thin films were grown by pulsed electron beam deposition method at room temperature. The gate leakage current was 20 nA at 5 V and the on/off current ratio up to 6×10⁴, limited mainly by the gate leakage. The transfer characteristics -I_d (V_gs)- showed a memory effect with a threshold voltage of 0.8 V in “0” state and -3.6 V in “1” state. The drain current-voltage characteristics family -I_d (V_ds)- showed saturation currents up to 3.5 mA in “1”state and about 500 μA in “0” state. The subthreshold swing was 0.3-0.5 V/decade.