DocumentCode :
743149
Title :
Solution-Processed Dual-Gate Polymer Field-Effect Transistors for Display Applications
Author :
Tae-Jun Ha ; Sonar, Prashant ; Dodabalapur, Ananth
Author_Institution :
Univ. of Texas, Austin, TX, USA
Volume :
9
Issue :
9
fYear :
2013
Firstpage :
710
Lastpage :
714
Abstract :
We describe the advantages of dual-gate thin-film transistors (TFTs) for display applications. We show that in TFTs with active semiconductor layers composed of diketopyrrolopyrrole-naphthalene copolymer, the on-current is increased, the off-current is reduced, and the sub-threshold swing is improved compared to single-gate devices. Charge transport measurements in steady-state and under non-quasi-static conditions reveal the reasons for this improved performance. We show that in dual-gate devices, a much smaller fraction of charge carriers move in slow trap states. We also compare the activation energies for charge transport in the top-gate and bottom-gate configurations.
Keywords :
charge measurement; display instrumentation; polymer blends; thin film transistors; TFT; active semiconductor layer; bottom-gate configuration; charge carrier fraction transport; charge transport measurement; diketopyrrolopyrrole-naphthalene copolymer; display application; single-gate device; solution-processed dual-gate polymer field-effect transistor; subthreshold swing; top-gate configuration; Capacitance; Charge carriers; Logic gates; Polymers; Semiconductor device measurement; Thin film transistors; Charge carrier transport; display applications; dual-gate configuration; non-quasi-static measurements; polymer field-effect transistors (FETs); velocity distributions;
fLanguage :
English
Journal_Title :
Display Technology, Journal of
Publisher :
ieee
ISSN :
1551-319X
Type :
jour
DOI :
10.1109/JDT.2012.2224636
Filename :
6374702
Link To Document :
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