• DocumentCode
    743854
  • Title

    Design and Fabrication of a TiO2/SiO2 Dielectric Broadband and Wide-Angle Reflector and Its Application to GaN-Based Blue LEDs

  • Author

    Nan-Ming Lin ; Shih-Chang Shei ; Shoou-Jinn Chang

  • Author_Institution
    Dept. of Electr. Eng., Nat. Univ. of Tainan, Tainan, Taiwan
  • Volume
    51
  • Issue
    7
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    In this paper, optical software and ion-assisted e-gun evaporation with radio frequency neutralizer were applied to simulate and fabricate a broadband reflector, respectively. It can almost reach 100% between 400 and 630 nm and between 400 and 580 nm with light incident angles of 5° and 45°, respectively. With 350-mA current injection, it was found that we achieved 34% enhancement in the GaN-based blue LEDs output power by the formation of a broadband reflector. Furthermore, it can be seen clearly that the optical microscopes images of the LEDs with an 11 pairs distributed Bragg reflector and with a broadband reflector were brighter than that of the LED without a reflector. The LED with a broadband reflector is the brightest of all LEDs. This result agrees with that observed in the current-output power characteristics.
  • Keywords
    III-V semiconductors; dielectric materials; distributed Bragg reflectors; gallium compounds; light emitting diodes; light sources; optical design techniques; optical fabrication; optical materials; silicon compounds; titanium compounds; GaN; GaN-based blue LED output power; TiO2-SiO2; TiO2-SiO2 dielectric broadband reflector; current 350 mA; current injection; current-output power characteristics; distrbuted Bragg reflector; ion-assisted e-gun evaporation; light incident angles; optical microscopes; optical software; radio frequency neutralizer; wavelength 400 nm to 580 nm; wavelength 400 nm to 630 nm; wide-angle reflector; Broadband communication; Current measurement; Distributed Bragg reflectors; Gallium nitride; Light emitting diodes; Optical device fabrication; Photonics; GaN; LEDs; broadband; reflector;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2015.2439518
  • Filename
    7122868