DocumentCode :
744220
Title :
Normally-Off Computing for Crystalline Oxide Semiconductor-Based Multicontext FPGA Capable of Fine-Grained Power Gating on Programmable Logic Element With Nonvolatile Shadow Register
Author :
Aoki, Takeshi ; Okamoto, Yuki ; Nakagawa, Takashi ; Kozuma, Munehiro ; Kurokawa, Yoshiyuki ; Ikeda, Takayuki ; Yamade, Naoto ; Okazaki, Yutaka ; Miyairi, Hidekazu ; Fujita, Masahiro ; Koyama, Jun ; Yamazaki, Shunpei
Author_Institution :
Semicond. Energy Lab. Co., Ltd., Atsugi, Japan
Volume :
50
Issue :
9
fYear :
2015
Firstpage :
2199
Lastpage :
2211
Abstract :
Normally-off computing (Noff computing) using a multicontext field programmable gate array (MC-FPGA) consisting of crystalline oxide semiconductor FETs has been developed. The Noff computing discussed in this paper is a control architecture for an MC-FPGA capable of performing fine-grained power gating on each programmable logic element (PLE) whose registers include a volatile register and also a nonvolatile shadow register for storing and loading data in the volatile register. The MC-FPGA performs fine-grained control of power supplied only to PLEs contributing to effective calculation, when context switching happens. With an MC-FPGA fabricated with a hybrid process of a 1.0 μm crystalline oxide semiconductor FET on a 0.5 μm CMOS FET, it has been confirmed that the proposed Noff computing can resume the previous task when a context switches back to it, increases PLE use efficiency, and reduces the power consumption by 27.7% at operating frequencies of 20 MHz with a driving voltage of 2.5 V.
Keywords :
CMOS integrated circuits; MOSFET; field programmable gate arrays; low-power electronics; power supply circuits; CMOS FET; context switching; crystalline oxide semiconductor FET; field programmable gate array; fine grained control; fine grained power gating; frequency 20 MHz; hybrid process; multicontext FPGA; nonvolatile shadow register; normally-off computing; power consumption; power supply; programmable logic element; size 0.5 mum; size 1.0 mum; voltage 2.5 V; Context; Field effect transistors; Field programmable gate arrays; Nonvolatile memory; Random access memory; Registers; Switches; CAAC-IGZO; crystalline IGZO; crystalline oxide semiconductor; field programmable gate array; multicontext; nonvolatile memory; normally-off computing; oxide semiconductor; power gating; shadow register;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2015.2438824
Filename :
7128746
Link To Document :
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