DocumentCode
744552
Title
The Influence of the n-Side Doping on Metastable Defect Concentrations in Cu(In,Ga)Se2 Evaluated From Space Charge Profiles
Author
Maciaszek, Marek ; Zabierowski, Pawel
Author_Institution
Fac. of Phys., Warsaw Univ. of Technol., Warsaw, Poland
Volume
5
Issue
5
fYear
2015
Firstpage
1454
Lastpage
1461
Abstract
In this study, we investigate, through numerical simulations, the influence of the n-side of the Cu(In,Ga)Se2 (CIGS)-based photovoltaic devices on capacitance space charge profiles, with a special emphasis on evaluating metastable defect concentrations. We calculated that for plausible doping level of the CdS buffer ranging from 1016 to 1018 cm-3, the values of hole concentrations in the absorber delivered by capacitance can be underestimated, and the ZnO/CdS/CIGS devices should not be treated a priori as n+-p junctions. We showed how this effect can influence the values of metastable defect concentrations extracted from capacitance-voltage (CV) profiles. We indicated that the apparent nonuniformity of experimental CV profiles might be due to an incomplete depletion of the buffer layer. Based on our results, we proposed experiments that can help unveil the correct shallow acceptor and metastable defect concentration in CIGS.
Keywords
II-VI semiconductors; buffer layers; capacitance; copper compounds; doping profiles; gallium compounds; indium compounds; semiconductor device models; solar cells; space charge; ternary semiconductors; wide band gap semiconductors; CdS buffer; ZnO-CdS-Cu(InGa)Se2; buffer layer; capacitance space charge profiles; capacitance-voltage profiles; doping level; hole concentrations; metastable defect concentrations; n-side doping; numerical simulations; photovoltaic devices; shallow acceptor; Capacitance; Doping; II-VI semiconductor materials; Junctions; Photovoltaic cells; Semiconductor process modeling; Zinc oxide; Capacitance–voltage profiling; Capacitance???voltage profiling; CdS; Cu(In,Ga)Se2 (CIGS); defects; metastabilities;
fLanguage
English
Journal_Title
Photovoltaics, IEEE Journal of
Publisher
ieee
ISSN
2156-3381
Type
jour
DOI
10.1109/JPHOTOV.2015.2444097
Filename
7138562
Link To Document