Title :
Photovoltaic Behavior of V2O5/4H-SiC Schottky Diodes for Cryogenic Applications
Author :
Di Benedetto, Luigi ; Landi, Giovanni ; Licciardo, Gian Domenico ; Neitzert, Heinz-Christoph ; Bellone, Salvatore
Author_Institution :
Dept. of Ind. Eng., Univ. of Salerno, Fisciano, Italy
Abstract :
The photovoltaic behavior of (divanadioum pentoxide)/(4H polytype silicon carbide) Schottky diodes under ultraviolet illumination and down to 28K is investigated. In addition to their high stability, by using the thermionic model the analysis allows to confirm the predictability of performances at cryogenic temperatures, such as the high light/dark current ratio and the dependence of the photocurrent and open circuit voltage on material parameters. Because of the low-annealing temperature, this structure is shown to be a good candidate for solar-blind photodetectors in the UV spectral range of spatial and terrestrial cryogenic applications.
Keywords :
Schottky diodes; annealing; cryogenic electronics; silicon compounds; vanadium compounds; wide band gap semiconductors; 4H polytype silicon carbide; Schottky diodes; V2O5-SiC; cryogenic temperatures; divanadioum pentoxide; high light-dark current ratio; low-annealing temperature; material parameters; open circuit voltage; photocurrent dependence; photovoltaic behavior; thermionic model; ultraviolet illumination; Annealing; Photoconductivity; Photodetectors; Photovoltaic systems; Schottky diodes; Silicon carbide; Temperature measurement; 4H−SiC device; 4H-SiC device; Photodiodes; Photovoltaic effects; Schottky diodes; Silicon compound; photodiodes; photovoltaic effects; schottky diodes; silicon compound;
Journal_Title :
Electron Devices Society, IEEE Journal of the
DOI :
10.1109/JEDS.2015.2451097
