• DocumentCode
    744631
  • Title

    Biodegradable Junctionless Transistors With Extremely Simple Structure

  • Author

    Jie Guo ; Jingquan Liu ; Bin Yang ; Guanghui Zhan ; Longjun Tang ; Hongchang Tian ; Xiaoyang Kang ; Huiling Peng ; Xiang Chen ; Chunsheng Yang

  • Author_Institution
    Dept. of Micro/ Nanoelectron., Shanghai Jiao Tong Univ., Shanghai, China
  • Volume
    36
  • Issue
    9
  • fYear
    2015
  • Firstpage
    908
  • Lastpage
    910
  • Abstract
    Biodegradable junctionless transistors with extremely simple structure are fabricated at room temperature. The free-standing sodium alginate membrane is used as both a substrate and a dielectric layer for the transistors. The source/drain electrodes and the channel region are made of one single patterned Al:ZnO (AZO) thin film. The proposed transistors can be operated at a low voltage of 1 V. Dissolution tests of those transistors in deionized water demonstrate their completely physical transience within 60 min. The operation mode of such transistors can effectively be tuned from the depletion mode to the enhancement mode by varying the thickness of the AZO film. Moreover, a resistor-loaded invertor was demonstrated by connecting those transistors in series with a 3 MΩ resistor.
  • Keywords
    II-VI semiconductors; aluminium; dielectric materials; electrochemical electrodes; invertors; resistors; semiconductor thin films; thin film transistors; wide band gap semiconductors; zinc compounds; ZnO:Al; biodegradable junctionless transistors; channel region; deionized water; depletion mode; dielectric layer; dissolution tests; enhancement mode; extremely simple structure; free-standing sodium alginate membrane; one single patterned AZO thin film; resistance 3 Mohm; resistor-loaded invertor; source-drain electrodes; substrate; temperature 293 K to 298 K; Arrays; Biomembranes; Films; Logic gates; Substrates; Transistors; Junctionless transistors; biodegradable transistors; free-standing sodium alginate membrane;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2015.2451672
  • Filename
    7145405