Title :
Observation of Degenerate One-Dimensional Subbands in Single n-Channel Junctionless Nanowire Transistors
Author :
Liuhong Ma ; Weihua Han ; Hao Wang ; Xiang Yang ; Fuhua Yang
Author_Institution :
Eng. Res. Center for Semicond. Integration Technol., Inst. of Semicond., Beijing, China
Abstract :
We experimentally investigate one-dimensional electron transport in single n-channel junctionless nanowire transistor at low temperature. Current step increases with the gate voltage is clearly observed at the temperature of 6 K, attributed to the electron transport through one-dimensional subbands formed in the nanowire. The height of the first and the fourth steps is half of that of the second and the third steps, resulting from the twofold degeneracy of certain subbands.
Keywords :
electron transport theory; field effect transistors; nanoelectronics; nanowires; degenerate one-dimensional subbands; gate voltage; one-dimensional electron transport; single n-channel junctionless nanowire transistors; temperature 6 K; Logic gates; Nanoscale devices; Oscillators; Plasma temperature; Potential well; Silicon; Transistors; Junctionless nanowire transistor; current step; degenerate subband levels; junctionless nanowire transistor; low temperatures; quantum confinement effect;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2451646
