Title :
Ultra low phase noise sapphire-SiGe HBT oscillator
Author :
Llopis, O. ; Cibiel, G. ; Kersale, Y. ; Regis, M. ; Chaubet, M. ; Giordano, V.
Author_Institution :
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
fDate :
5/1/2002 12:00:00 AM
Abstract :
A state of the art C-band oscillator is presented. It is based on a high Q WGM sapphire resonator combined with a low residual phase noise SiGe HBT amplifier. A two oscillator experiment performed on this system has revealed a phase noise level of -133 dBc/Hz at 1 kHz offset from the 4.85 GHz carrier, which is the best published phase noise result for a single loop, free running microwave oscillator.
Keywords :
Ge-Si alloys; Q-factor; circuit noise; dielectric resonator oscillators; feedback oscillators; heterojunction bipolar transistors; microwave oscillators; phase noise; sapphire; semiconductor materials; 4.85 GHz; Al/sub 2/O/sub 3/; C-band oscillator; DRO; SHF; SiGe; SiGe HBT amplifier; bipolar transistor microwave oscillator; feedback loop; high-Q WGM resonator; sapphire resonator; sapphire-SiGe HBT oscillator; ultra low phase noise oscillator; whispering gallery mode resonator; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave oscillators; Microwave transistors; Phase noise; Silicon germanium; Stability; Temperature dependence; Temperature distribution;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/7260.1000188
